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| Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2439 DESCRIPTION With TO-3PML package Complement to type 2SB1588 APPLICATIONS Audio ,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 150 5 Emitter-base voltage Open collector Collector current 10 1 TC=25ae 80 150 -55~150 Base current Collector power dissipation Junction temperature Storage temperature UNIT V V V A A W ae ae 1 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=7 A;IB=7m A IC=7 A;IB=7m A VCB=160V ;IE=0 VEB=5V; IC=0 IC=7A ; VCE=4V IC=2A ; VCE=12V IE=0; VCB=10V;f=1MHz 5000 55 95 MIN 150 2SD2439 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2.5 3.0 100 100 |I |I V V A A MHz pF Switching times ton ts tf hFE classifications O 5000-12000 P TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 0.5 |I IC=7A;RL=10| IB1=-IB2=7mA VCC=70V 10.0 1.1 Fall time |I s |I s s Y 15000-30000 6500-20000 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2439 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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